1 ui(d)4n60 n-ch 600v fast switching mosfets id 600v ? 3.2a the ui(d)4n60 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the ui(d)4n60 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to-251/to-252 pin configuration product summery bv rd dss s(on) 2.25 symbol p arameter to - 251/to - 252 unites v dss drain - source voltage 600 v i d drain current C continuous(t c = 25 ) C continuous(t c = 100 ) 3.2 a 1. 9 a i dm drain current C pulsed (note1) 12.8 a v gss gate - source voltage 30 v e as single pulsed av alanche energy (note2) 63 mj d v/dt peak diode recovery dv/dt (note3) 4.5 v/ns p d power dissipation (t c = 25 ) - derate above 25 57 w 0. 45 w/ t j1 t stg o perating and storage temperature range - 55 to + 150 t l maximum lead temperature for soldering p urposes, 1/8 from case for 5 seconds 300 symbol parameter typ max units r jc thermal resistance, junction - to - case -- 2. 2 /w r ja thermal resistance, junction - to - ambient -- 50 /w
2 electrical characteristics (t j =25 , unless otherwise noted) n-ch 600v fast switching mosfets symbol p arameter test conditions min typ max units off characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 -- 0.6 -- v/ i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v (t c = 25 ) -- -- 1 0 a v ds = 48 0 v, v gs = 0 v (t c = 1 25 ) -- -- 10 0 a i gssf gate - body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 n a i gssr gate - body leakage cu rrent, reverse v gs = - 30 v, v ds = 0 v -- -- - 100 n a on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 3. 5 4. 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 1.6 a -- 2.2 5 2.81 g fs forward transconductance v ds = 1 0 v, i d = 1.6 a (note 4) -- 2.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 500 650 pf c oss output capacitance -- 5 3.2 69 pf c rss reverse transfer capacitance -- 7.0 9.1 pf switching characteris tics t d(on) turn - on delay time v dd = 300 v, i d = 3.2 a, r g = 25 (note 4, 5) -- 11 27 ns t r turn - on rise time -- 20 48 ns t d(off) turn - off delay time -- 30 72 ns t f turn - off fall time -- 19 46 ns q g total gate charge v ds = 480 v, i d = 3.2 a, v gs = 10 v (note 4, 5) -- 14.5 20 nc q gs gate - source charge -- 3.4 -- nc q gd gate - drain charge -- 7.0 -- nc drain - source diode characteristics and maximum ratings i s maximum continuous drain - source diode forward current -- -- 3.2 a i sm maximum pulsed drain - source diode forward current -- -- 1 2.8 a v sd drain - source diode forward voltage v gs = 0 v, i s = 3.2 a -- 1.13 1.4 v t rr reverse recovery time v gs = 0 v,i s = 3.2 a, di f /dt = 100 a/ s (note 4) -- 561 -- ns q rr reverse recovery charge -- 0 . 8 -- c notes: 1. repetitive rating pulse width limited by maximum junction temperature 2. l = 1 0 mh, i as = 3. 4 a, v dd = 50v, r g =25, starting t j = 25 3. i sd 3.2 a, di/dt 200a/s, v dd bv dss , starting t j = 25 4. p u lse test pulse width 300 s , duty cycle 2% 5. essentially independent of operating temperature ui(d)4n60
3 n-ch 600v fast switching mosfets gate charge test circuit & waveform unclamped ind uctive switching test circuit & waveforms resistive switching test circuit & waveforms ui(d)4n60
n-ch 600v fast switching mosfets peak diode recovery dv/dt test circuit & waveforms ui(d)4n60
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